NTE390 (NPN)
Silicon Complementary Transistors General Purpose

See also >>> NTE391 (PNP)

Description:
The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.

Features:
- 10A Collector Current
- Low Leakage Current: ICEO = 0.7mA @ VCE = 60V
- Excellent DC Gain: hFE = 40 Typ @ 3A
- High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 500mA, f = 1MHz

Info as pdf-file
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Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO.....................................................100V
Collector-Base Voltage, VCB.......................................................100V
Emitter-Base Voltage, VEB...........................................................5V
Collector Current, IC
Continuous.................................................................. 10A
Peak (Note 1)................................................................ 15A
Continuous Base Current, IB.......................................................... 3A
Total Power Dissipation (TC = +25°C), PD............................................ 80W
Derate Above 25°C...................................................... 0.64W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +150°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 1.56°C/W
Thermal Resistance, Junction-to-Ambient, RthJA.................................. 35.7°C/W

Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle ≤ 10%.


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