NTE389
Silicon NPN Transistor Horizontal Output

Description:
The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits.

Features:
- Collector-Emitter Voltage: VCEX = 1500V
- Glass Passivated Base-Collector Junction
- Forward Bias Safe Operating Area @ 50μs = 20A, 300V
- Switching Times with Inductive Loads: tf = 0.5μs (Typ) @ IC = 3A

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Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO.....................................................750V
Collector-Emitter Voltage, VCEX.................................................... 1500V
Emitter-Base Voltage, VEBO.......................................................... 5V
Continuous Collector Current, IC...................................................... 4A
Continuous Base Current, IB.......................................................... 3A
Continouos Emitter Current, IE........................................................ 7A
Total Power Dissipation, PD
TC = +25°C................................................................ 100W
TC = +100°C................................................................ 40W
Derate Above +25°C...................................................... 0.8W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +150°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 1.25°C/W
Maximum Lead Temperature (For Soldering, 1/8” from Case for 5sec), TL.............. +275°C


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