NTE386
Silicon NPN Transistor Audio Power Amp, Switch

Description:
The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high- speed power switching in inductive circuit where fall time is critical. This device is particularly suited for line operated switchmode applications.

Applications:
- Switching Regulators
- Inverters
- Solenoid and Relay Drivers
- Motor Controls
- Deflection Circuits

Info as pdf-file
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Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO(sus).................................................500V
Collector-Emitter Voltage, VCEV.....................................................800V
Emitter-Base Voltage, VEB...........................................................6V
Collector Current, IC
Continuous.................................................................. 20A
Peak (Note 1)................................................................ 30A
Base Current, IC
Continuous.................................................................. 10A
Peak (Note 1)................................................................ 30A
Total Power Dissipation (TC = +100°C), PD.......................................... 100W
Total Power Dissipation (TC = +25°C), PD...........................................175W
Derate Above 25°C.......................................................1.0W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC.....................................1.0°C/W
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL.............. +275°C

Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.


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