NTE368
Silicon NPN Transistor RF Power Output
PO = 60W @ 512MHz

Description:
The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.

Features:
- Specified 12.5 Volt, 470MHz Characteristic:
Output Power = 60 Watts
Minimum Gain = 4.4dB
Efficiency = 55%
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Built-In Matching Network for Broadband Operation - Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16-volt High Line and Overdrive

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO...................................................... 16V
Collector-Base Voltage, VCBO.......................................................36V
Emitter-Base Voltage, VEBO.......................................................... 4V
Collector Current-Continuous, IC.....................................................11A
Total Device Dissipation (TC = +25°C), PD...........................................175W
Derate above 25°C.......................................................1.0W/°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.....................................1.0°C/W


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