NTE363 Silicon NPN Transistor RF Power Amp 4W

Formerly: ECG363

Silicon NPN Transistor RF Power Amp, PO = 4W

Description:
The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF communications.

Features:
- Designed for UHF Military and Commercial Equipment
- 4W (Min) with Greater than 8dB Gain
- Withstands Infinite VSWR Under Operating Conditions
- Low Inductance Stripline Package
- Emitter Stabilized

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Collector-Base Voltage, VCBO.......................................................36V
Collector-Emitter Voltage, VCEO...................................................... 16V
Emitter-Base Voltage, VEBO.......................................................... 4V
Maximum Collector Current, IC.................................................... 800mA
Total Device Dissipation (TC = +25°C), PT............................................ 15W
Operating Junction Temperature, TJ...............................................+200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 11.6°C/W

This product is discontinued.
Only while stock lasts.


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