NTE360
Silicon NPN Transistor RF Power Output
PO = 40W @ 175MHz

Description:
The NTE360 is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range.

Features:
- Specified 28 Volt, 175MHz Characteristics:
Output Power = 40 Watts
Minimum Gain = 7.6dB
Efficiency = 60%
- Characterized from 125 to 175MHz
- Includes Series Equivalent Impedances

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO...................................................... 35V
Collector−Base Voltage, VCB........................................................ 65V
Emitter−Base Voltage, VEB...........................................................4V
Collector Current−Continuous, IC...................................................... 5A
Total Device Dissipation (TC = +25°C), PD............................................ 60W
Derate above 25°C.....................................................342mW/°C
Operating Junction Temperature Range, TJ.................................. −65° to +200°C
Storage Temperature Range, Tstg.......................................... −65° to +200°C


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