NTE353
Silicon PNP Transistor RF Power Output
PO = 4W @ 175MHz

Description:
The NTE353 is designed for 12.5 Volt VHF large−signal amplifier applications required in military and industrial equipment operating to 250MHz.

Features:
- Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggedness.
- Low lead Inductance Stripline Packaging for Easier Design and Increased Broadband Capabilities
- Flange Package for Easy Mounting and Better Thermal Conductivity to Heat Sink.
- Exceptional Power Output Stability versus Temperature.

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO...................................................... 18V
Collector−Base Voltage, VCBO.......................................................36V
Emitter−Base Voltage, VEBO.......................................................... 4V
Collector Current−Continuous, IC...................................................... 1A
Total Device Dissipation (TC = +25°C, Note 1), PD...................................... 8W
Derate Above 25°C.................................................... 45.7mW/°C
Storage Temperature Range, Tstg.......................................... −65° to +200°C

Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.


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