Silicon Rectifier Schottky Barrier Typ NTE6084

The NTE6084 is a silicon power rectifier in a DO4 type package designed using the Schottky Barrier principle with a platinum barrier metal.

Features:
- Guardring for Stress Protection
- Low Forward Voltage
- +150°C Operating Junction Temperature Capability
- Guaranteed Reverse Avalanche

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Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, VRRM.......................... 45V
Working Peak Reverse Voltage, VRWM.......................... 35V
DC Blocking Voltage, VR............................ 45V
Average Rectified Forward Current (VR = 45V, TC = +105°C), IO.......... 30A
Non–Repetitive Peak Surge Current, IFSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60Hz) ... 600A
Peak Repetitive Reverse Surge Current (2.0μs, 1.0kHz), IRRM..........2A
Voltage Rate of Change (VR = 45V), dv/dt...................... 700V/μs
Peak Operating Junction Temperature (Forward Current Applied), TJ(pk).............+150°C
Operating Junction Temperature Range, TJ...............–55° to +150°C
Storage Temperature Range, Tstg..................... –55° to +150°C
Maximum Thermal Resistance, Junction–to–Case, RthJC.......... 2.0°C/W


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