NTE348
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE348 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V
VHF large-signal power amplifier applications required in military and industrial equipment to
300MHz.
Features:
- Specified 12.5V, 175MHz Characteristics:
Output Power = 4W
Minimum Gain = 12dB
Efficiency = 50%
Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams
Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO...................................................... 18V
Collector-Emitter Voltage, VCES...................................................... 36V
Emitter-Base Voltage, VEBO.......................................................... 4V
Continuous Collector Current, IC...................................................... 1A
Total Device Dissipation (Note 1, TC = +25°C), PD.....................................12W
Derate Above 25°C.................................................... 68.5mW/°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
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