NTE347
Silicon NPN Transistor RF Power Output
PO = 3W @ 175MHz

Description:
The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in military and industrial equipment operating to 240MHz.

Features:
- Low lead inductance stripline package for easier design and increased broadband capability.
- Balanced Emitter Construction for increased Safe Operating Area. The NTE347 is designed to withstand an Open or Shorted Load at rated Output Power.
- Specified 13.6 volt, 175MHz Characteristics−
Output Power = 3.0 Watts
Minimum Gain = 8.2dB
Efficiency = 50%

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, VCEO...................................................... 18V
Collector−Base Voltage, VCB........................................................ 36V
Emitter−Base Voltage, VEB.........................................................4.0V
Continuous Collector Current, IC.................................................... 0.6A
Total Device Dissipation (TA = +25°C), PD............................................ 15W
Derate Above 25°C...................................................... 86mW/°C
Operating Junction Temperature Range, TJ.................................−65° to +200°C
Storage Temperature Range, Tstg.......................................... −65° to +200°C


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