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NTE346 NPN Si-Transistor 400mA 20V Po=1W 175MHz TO-39

Bestell-Nr.:    NTE346


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NTE346 NTE-346 | ECG346 ECG-346 | NTE Electronics NTE346
Silicon NPN Transistor RF Power Transistor

Description:
The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver or pre-driver stages, in VHF and UHF equipment.

Features:
- Current-Gain-Bandwidth Product-fT = 500MHz (Min) @ IC = 50mAdc
- Power Gain-Gpe = 10dB (Min) @ VCE =12Vdc
- 1 Watt Minimum Power Output @ f = 175MHz
- Multiple-Emitter Construction for Excellent High-Frequency Performance

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO.....................................................20V
Collector-Base Voltage, VCB........................................................ 40V
Emitter-Base Voltage, VEB.........................................................2.0V
Collector Current-Continuous, IC.................................................400mA
Base Current-Continuous. IB.....................................................400mA
Total Device Dissipation (TA = +25°C), PD............................................ 1.0W
Derate above 25°C...................................................5.71mW/°C
Total Device Dissipation (TC = +25°C), PD.......................................... 3.5Wa
Derate above 25°C.....................................................20mW/°C
Storage Temperature Range, Tstg.........................................-65° to +200°C


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