NTE344
Silicon NPN Transistor RF Power Output
PO = 30W @ 175MHz

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO...................................................... 17V
Collector−Base Voltage, VCBO.......................................................35V
Emitter−Base Voltage, VEBO.......................................................... 4V
Continuous Collector Current, IC...................................................... 7A
Collector Power Dissipation, PC.....................................................50W
Operating Junction Temperature, Tj................................................ +175°C
Storage Temperature Range, Tstg.......................................... −65° to +175°C
Thermal Resistance, Junction−to−Case, RthJC.......................................3°C/W


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

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