NTE343
Silicon NPN Transistor RF Power Output
(PO = 14W, 175MHz)

Description:
The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.

Features:
- High Power Gain: Gpe ≥ 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz)
- Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 18W, f = 175MHz

Application:
- 10 to 14 Watt Output Power Amplifiers in VHF Band Mobile Radio Applications

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO.......................................................35V
Collector-Emitter Voltage (RBE = ∞), VCEO............................................ 17V
Emitter-Base Voltage, VEBO.......................................................... 4V
Collector Current, IC...............................................................3.5A
Collector Dissipation, PC
TA = 25°C.................................................................. 1.5W
TC = 25°C.................................................................. 25W
Operating Junction Temperature, TJ...............................................+175°C
Storage Temperature Range, Tstg.......................................... -55° to +175°C
Thermal Resistance, Junction-to-Ambient, RthJA.................................. 100°C/W
Thermal Resistance, Junction-to-Case, RthJC.......................................6°C/W


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