NTE340
Silicon NPN Transistor RF Power Output, High Frequency

Features:
- High Transition Frequency
- Output of 0.6W can be obtained in the VHF Band (f = 175MHz).

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO.......................................................36V
Collector-Emitter Voltage, VCEO.....................................................16V
Emitter-Base Voltage, VEBO.........................................................3V
Peak Collector Voltage, ICP........................................................ 0.5A
Collector Current, IC.............................................................. 0.3A
Collector Power Dissipation, PC.....................................................1W
Operating Junction Temperature, Tj...............................................+150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C


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