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ab 10 98.61CHF
ab 50 93.90CHF
ab 100 89.48CHF

NTE339 NPN Si-Transistor 7A 24V 40W Power Output RF-50S10

Bestell-Nr.:    NTE339


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NTE339 NTE-339 | ECG339 ECG-339 | NTE Electronics NTE339
Silicon NPN Transistor RF Power Output

Description:
The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large− signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz.

- Specified 12.5 Volt, 50MHz Characteristics
Output Power = 40 Watts
Minimum Gain = 7.5dB
Efficiency = 50%

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO.......................................................48V
Collector−Emitter Voltage, VCEO...................................................... 24V
Emitter−Base Voltage, VEBO.........................................................4V
Continuous Collector Current, IC...................................................... 7A
Total Device Dissipation (TC = +25°C), Ptot.......................................... 100W
Derate Above 25°C.....................................................571mW/°C
Operating Junction Temperature, Tj................................................ +200°C
Storage Temperatures Range, Tstg.........................................−65° to +150°C
Thermal Resistance, Junction−to−Case, RthJC.................................... 1.55°C/W

Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.


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