NTE337
Silicon NPN Transistor RF Power Amp, Driver

Description:
The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large- signal amplifier driver and pre-driver stages. This device is intended for use in industrial communications equipment operating at frequencies to 80MHz.

Features:
- Specified 12.5V, 50MHz Characteristics:
Output Power = 8W
Minimum Gain = 10dB
Efficiency = 50%

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO...................................................... 18V
Collector-Base Voltage, VCB.........................................................36V
Emitter-Base Voltage, VEB...........................................................4V
Continuous Collector Current, IC...................................................... 2A
Total Device Dissipation (TC = +25°C), PD............................................ 20W
Derate Above 25°C...................................................... 114W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C


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