NTE335 NTE-335 | ECG335 ECG-335 | NTE Electronics
NTE335
Silicon NPN Transistor
RF Power Output
See also >>> NTE336
Description:
The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications
in industrial, commercial and amateur radio equipment to 30MHz.
Features:
- Specified 12.5V, 30MHz Characteristics:
Output Power = 80W
Minimum Gain = 12dB
Efficiency = 50%
- Available in Two Different Package Designs:
NTE335 (W52N, Flange Mount)
NTE336 (T93D, Stud Mount)
Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO...................................................... 25V
Collector−Base Voltage, VCBO.......................................................45V
Emitter−Base Voltage, VEBO.......................................................... 4V
Continuous Collector Current, IC.....................................................20A
Total Device Dissipation (TC = +25°C), PD...........................................250W
Derate above 25°C...................................................... 1.43W/°C
Storage Temperature Range, Tstg.......................................... −65° to +150°C
Thermal Resistance, Junction−to−Case, RthJC.....................................0.7°C/W
NTE Electronic Components (our whole assortment)
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Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.
