NTE329 NTE-329 | ECG329 ECG-329 | NTE Electronics
NTE329
Silicon NPN Transistor
RF Power Amp, CB
Description:
The NTE329 is designed primarily for use in large-signal output amplifier stages. Intended for use
in Citizen-Band communications equipment operating to 30MHz. High breakdown voltages allow a
high percentage of up-modulation in AM circuits.
Features:
- Specified 12.5V, 28MHz Characteristic:
Power Output = 3.5W
Power Gain = 10dB
Efficiency = 70% Typical
Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams
Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO...................................................... 30V
Collector-Base Voltage, VCBO.......................................................60V
Emitter-Base Voltage, VEBO.......................................................... 3V
Continuous Collector Current, IC...................................................... 1A
Total Device Dissipation (TC = +25°C, Note 1), PD...................................... 5W
Derate above 25°C.................................................... 28.6mW/°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
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