NTE323 NTE-323 | ECG323 ECG-323 | NTE Electronics
NTE323 (PNP)
Silicon Complementary Transistors
General Purpose
See also >>> NTE324 (NPN)
Description:
The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a
TO39 type package designed for use as drivers for high power transistors in general purpose amplifier
and switching circuits.
Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams
Absolute Maximum Ratings:
Collector-Base Voltage (IE = 0), VCBO...............................................120V
Collector-Emitter Voltage, VCEO.....................................................120V
Emitter-Base Voltage (IC = 0), VEBO...................................................4V
Collector Current, IC.................................................................1A
Base Current, IB................................................................ 500mA
Total Power Dissipation, Ptot
TC = +25°C.................................................................10W
TA = +25°C.................................................................. 1W
Operating Junction Temperature, TJ...............................................+200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 17.4°C/W
Thermal Resistance, Junction-to-Ambient, RthJA.................................. 175°C/W
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