NTE322
Silicon NPN Transistor RF Power Output

Description:
The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen- Band and other high-frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up-modulation in AM circuits.

Features:
- Output Power: 3.5W (Min) @ VCC = 13.6V
- Power Gain: 11.5dB (Min)
- High Collector Emitter Breakdown Voltage: V(BR)CES ≥ 65V
- DC Current Gain: Linear to 500mA

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCES...................................................... 65V
Emitter-Base Voltage, VEB...........................................................3V
Continuous Collector Current, IC.................................................. 500mA
Total Power Dissipation (TA = +25°C), PD.............................................1.0W
Derate above 25°C.....................................................8.0mW/°C
Total Power Dissipation (TC = +25°C), PD............................................ 10W
Derate above 25°C...................................................... 80mW/°C
Operating Junction Temperature Range, TJ.................................. -55° to +150°C
Storage Junction Temperature Range, Tstg.................................. -55° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 12.5°C/W
Thermal Resistance, Junction to Ambient (Note 1), RthJA...........................125°C/W

Note 1. RthJA is measured with the device soldered into a typical printed circuit board.


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