NTE317 Silicon NPN Transistor RF Power Output

Formerly: ECG317

Silicon NPN Transistor RF Power Output

Description:
The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions.

Features:
- 70W Minimum with Greater than 13.5dB Gain
- Withstands Severe Mismatch under Operating Conditions
- Emitter Ballasted
- Low Inductance Stripline Package

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector Base Voltage, VCBO........................................................ 36V
Collector−Emitter Voltage, VCEO...................................................... 18V
Emitter−Base Voltage, VEBO.......................................................... 4V
Maximum Collector Current, IC.......................................................15A
Total Device Dissipation (+25°C), PT...............................................220W
Thermal Resistance, Junction−to−Case, RthJC.....................................0.8°C/W
Junction Temperature Range, TJ...........................................−65° to +200°C
Storage Temperature Range, Tstg.......................................... −65° to +200°C

This product is discontinued.
Only while stock lasts.


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Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.