NTE312
N-Channel Silicon Junction Field Effect Transistor

Description:
The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO-92 package.

Features:
- High Power Gain: 10dB Min at 400MHz
- High Transconductance: 4000 μmho Min at 400MHz
- Low Crss: 1pF Max
- High (Yfs) / Ciss Ratio (High-Frequency Figure-of-Merit)
- Drain and Gate Leads Separated for High Maximum Stable Gain
- Cross-Modulation Minimized by Square-Law Transfer Characteristic
- For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain-Gate Voltage, VDG............................................................ 30V
Gate-Source Voltage, VGS.........................................................-30V
Gate Current, IG.................................................................. 50mA
Total Device Dissipation (TA = +25°C ), PD.........................................360mW
Derate Above +25°C...................................................2.88mW/°C
Total Device Dissipation (TC = +25°C), PD.........................................500mW
Derate Above +25°C.................................................... 4.0mW/°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Lead Temperature, During Soldering (1/16 Inch from Case for 10sec), TL...............+260°C


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