NTE288 (PNP)
Silicon Complementary Transistors High Voltage, General Purpose Amplifier

See also >>> NTE287 (NPN)

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO.....................................................300V
Collector-Base Voltage, VCBE...................................................... 300V
Emitter-Base Voltage, VEBO
NTE287...................................................................... 6V
NTE288...................................................................... 5V
Continuous Collector Current, IC.................................................. 500mA
Total Device Dissipation @ TA = +25°C, PD........................................ 625mW
Derate Above +25°C...................................................... 5mW/°C
Total Device Dissipation @ TC = +25°C, PD...........................................1.5W
Derate Above +25°C.....................................................12mW/°C
Operating Junction Temperature Range, TJ.................................. -55° to +150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C
Thermal Resistance, Junction-to-Ambient, RthJA.................................200°C/mW
Thermal Resistance, Junction-to-Case, RthJC.................................. 83.3°C/mW


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