NTE267
Silicon NPN Transistor High Gain Darlington Power Amp, Switch

Features:
- Forward Current Transfer Ratio: hFE = 90,000 min.
- Free-Air Power Dissipation: 1.33W @ TA = +50°C
- Hard Solder Mountdown

Applications: - Driver
- Regulator
- Audio Output
- Relay Substitute
- Touch Switch
- Oscillator
- IC Driver
- Servo Amplifier
- Capacitor Multiplier

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)
Collector to Emitter, VCEO.......................................................... 30V
Emitter to Base, VEBO.............................................................. 13V
Collector to Emitter, VCES.......................................................... 30V
Collector Current, IC
Continuous...............................................................500mA
Peak........................................................................ 1A
Power Dissipation, PT
Tab at +25°C.............................................................6.25W
Free Air at +50°C w/Tab.................................................... 1.33W
Thermal Resistance, Junction to Case (Note 1), RthJC...............................20°C/W
Thermal Resistance, Junction to Ambient (Note 1), RthJA............................ 75°C/W
Operating Junction Temperature Range, TJ.................................-55° to +150°C
Storage Temperature Range, Tstg.........................................-55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), TL.......... +260°C

Note 1. Tab temperature is measured on center of tab, 1/16” from plastic body.


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