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NTE266 NPN Si-Transistor Darlington hFE=40000 0.5A 50V TO-202

Bestell-Nr.:    NTE266


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NTE266 NTE-266 | ECG266 ECG-266 | NTE Electronics NTE266
Silicon NPN Transistor Darlington Power Amplifier

Features:
- Forward Current Transfer Ratio: hFE = 40,000 Min
- Power Dissipation: 1.33W Free-Air @ TA = +50°C
- Hard Solder Mountdown

Applications:
- Driver, IC Driver
- Regulator
- Touch Switch
- Audio Output
- Relay Substitute
- Oscillator
- Servo-Amplifier
- Capacitor Multiplier

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-to-Emitter Voltage, VCEO...................................................50V
Collector-to-Emitter Voltage, VCES...................................................50V
Emitter-to-Base Voltage, VEBO...................................................... 13V
Collector Current, IC
Continuous.................................................................0.5A
Peak...................................................................... 1.0A
Power Dissipation (TC = +25°C), PD................................................ 6.25W
TA = +50°C With Tab........................................................ 1.33W
Thermal Resistance, Junction-to-Case (Note 1), RthJC.............................20°C/W
Thermal Resistance, Junction-to-Ambient (Note 1), RthJA...........................75°C/W
Operating Junction Temperature Range (Note 1), TJ.......................... -55° to +150°C
Storage Temperature range (Note 1), Tstg...................................-55° to +150°C
Lead Temperature (During Soldering, 1/16” from case, 10sec Max), TL.................+260°C

Note 1. Tab temperature is measured on center of tab, 1/16” from plastic body.


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