NTE253 (NPN)
Silicon Complementary Transistors Darlington Power Amplifier

See also >>> NTE254 (PNP)
See also >>> NTE253MCP

Description:
The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general-purpose amplifier and low-speed switching applications.

Features:
- High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A
- Monolithic Construction with Built-In Base-Emitter Resistors to Limit Leakage Multiplication

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Emitter Voltage, VCEO...................................................... 80V
Collector-Base Voltage, VCB.........................................................80V
Emitter-Base Voltage, VEB...........................................................5V
Collector Current, IC.................................................................4A
Base Current, IB................................................................ 100mA
Total Power Dissipation (TC = +25°C), PD............................................ 40W
Derate Above 25°C...................................................... 0.32W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +150°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 3.23°C/W

Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
Note 2. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and NTE254 (PNP).


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