NTE251 (NPN)
Silicon Complementary Transistors Darlington Power Amplifier

See also >>> NTE252 (PNP)

Description:
The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general-purpose amplifier and low-frequency switching applications.

Features:
- High DC Current Gain @ IC = 10A:
hFE = 2400 Typ (NTE251)
hFE = 4000 Typ (NTE252)
- Collector-Emitter Sustaining Voltage: VCEO(sus) = 100V Min
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Emitter Voltage, VCEO.....................................................100V
Collector-Base Voltage, VCB........................................................ 100V
Emitter-Base Voltage, VEB...........................................................5V
Collector Current, IC
Continuous.................................................................. 20A
Peak.......................................................................40A
Base Current, IB................................................................ 500mA
Total Power Dissipation (TC = +25°C), PD...........................................160W
Derate Above 25°C.....................................................0.915W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 1.09°C/W


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