NTE250 (PNP)
Silicon Complementary Transistors Darlington Power Amplifier

See also >>> NTE249 (NPN)

Description:
The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications.

Features:
- High DC Current Gain: hFE = 3500 Typ @ IC = 10A
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO.....................................................100V
Collector-Base Voltage, VCB........................................................ 100V
Emitter-Base Voltage, VEB...........................................................5V
Collector Current, IC................................................................ 16A
Base Current, IB................................................................ 500mA
Total Power Dissipation (TC = +25°C), PD...........................................150W
Derate Above 25°C.....................................................0.857W/°C
Operating Junction Temperature Range, TJ.................................. -55° to +200°C
Storage Temperature Range, Tstg.......................................... -55° to +200°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 1.17°C/W


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