NTE244 (PNP)
Silicon Complementary Transistors Darlington Power Amplifier

See also >>> NTE243 (NPN)

Description:
The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general-purpose amplifier and low-frequency switching applications.

Features:
- High DC Current Gain: hFE = 3000 Typ @ IC = 4A
- Collector-Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA
- Low Collector-Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 4A = 3V Max @ IC = 8A
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO...................................................... 80V
Collector-Base Voltage, VCB.........................................................80V
Emitter-Base Voltage, VEB...........................................................5V
Collector Current, IC
Continuous...................................................................8A
Peak.......................................................................16A
Base Current, IB................................................................ 120mA
Total Power Dissipation (TC = +25°C), PD...........................................100W
Derate Above 25°C.....................................................0.571W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 1.78°C/W


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