NTE236
Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)

Description:
The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

Features:
- High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)
- Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz

Application:
- 10 to 14 Watt Output Power Class AB Amplifier Applications in HF band

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO.......................................................60V
Collector−Emitter Voltage (RBE = ∞), VCEO............................................ 25V
Emitter−Base Voltage, VEBO.......................................................... 5V
Collector Current, IC.................................................................6A
Collector Dissipation, PC
TA = 25°C.................................................................. 1.7W
TC = 25°C.................................................................. 20W
Operating Junction Temperature, TJ...............................................+150°C
Storage Temperature Range, Tstg.......................................... −55° to +150°C
Thermal Resistance, Junction−to−Ambient, RthJA.................................. 73.5°C/W
Thermal Resistance, Junction−to−Case, RthJC.................................... 6.25°C/W


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