NTE232
Silicon PNP Transistor Darlington Amplifier, Preamp

Description:
The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type package designed for preamplifier input applications where high impedance is a requirement.

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Emitter Voltage, VCES...................................................... 30V
Emitter-Base Voltage, VEBO.......................................................... 8V
Collector-Base Voltage, VCBO.......................................................30V
Collector Current, IC.............................................................300mA
Total Power Dissipation (TA = +25°C), PT.......................................... 625mW
Derate above +25°C...................................................... 5mW/°C
Total Power Dissipation (TC = +25°C), PT.........................................1500mW
Derate above +25°C.....................................................12mW/°C
Operating Junction Temperature range, TJ...................................-55° to +150°C
Storage Temperature range, Tstg...........................................-55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec), TL...............+230°C


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