NTE218
Silicon PNP Transistor Audio Power Output

Description:
The NTE218 is ideal for use as a driver, switch and medium-power amplifier applications. This device features:

Features:
- Low Saturation Voltage - 0.6VCE(sat) @ IC = 1A
- High Gain Characteristics - hFE @ IC = 250mA: 30-100
- Excellent Safe Area Limits

NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO...................................................... 80V
Collector-Base Voltage, VCB.........................................................80V
Emitter-Base Voltage, VEB...........................................................7V
Collector Current, IC
Continuous...................................................................4A
Peak (Note 1)................................................................ 10A
Base Current, IB...................................................................2.A
Total Device Dissipation (TC = +25°C), PD...........................................25W
Derate above 25°C.................................................... 0.143W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C

Note 1 Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.


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