NTE210 (NPN)
Silicon Complementary Transistors General Purpose Output & Driver

See also >>> NTE211 (PNP)

Description:
The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications such as series, shunt and switching regulators, and low and high frequency inverters and converters.

Features:
- TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO...................................................... 75V
Collector-Emitter Voltage, VCES...................................................... 90V
Emitter-Base Voltage, VEBO.......................................................... 5V
Collector Current, IC
Continuous...................................................................1A
Peak (Note 1).................................................................2A
Total Power Dissipation (TA = +25°C, Note 2), PD.....................................1.67W
Derate Above 25°C.................................................... 13.3mW/°C
Total Power Dissipation (TC = +25°C), PD...........................................6.25W
Derate Above 25°C...................................................... 50mW/°C
Operating Junction Temperature Range, TJ.................................. -55° to +150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C
Lead Temperature (During Soldering, 1/16” from case, 10sec), TL.....................+260°C
Maximum Thermal Resistance, Junction-to-Ambient, RthJA.........................75°C/W
Maximum Thermal Resistance, Junction-to-Case, RthJC............................ 20°C/W

Note 1. Pulse Test: Pulse Width ≤ 300μs.
Note 2. The actual power dissipation capability of the TO202 type package is 2W @ TA = +25°C.


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