NTE199
Silicon NPN Transistor Low Noise, High Gain Amplifier

Description:
The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics.

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Emitter Voltage, VCEO...................................................... 50V
Collector-Base Voltage, VCBO.......................................................70V
Emitter-Base Voltage, VEBO.......................................................... 5V
Steady State Collector Current (Note 1), IC.........................................100mA
Total Power Dissipation (TA = +25°C), PT.......................................... 360mW
Derate Above +25°C.................................................... 3.3mW/°C
Total Power Dissipation (TA = +55°C), PT.......................................... 260mW
Derate Above +25°C.................................................... 3.3mW/°C
Operating Junction Temperature Range, TJ.................................. -55° to +125°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C
Lead Temperature (During Soldering, 1/16” from case, 10sec max), TL.................+260°C

Note 1. Determined from power limitations due to saturation voltages at this current


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