NTE196 (NPN)
Silicon Complementary Transistors Audio Power Output and Medium Power Switching

See also >> NTE197 (PNP)

Description:
The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type package designed for use in general purpose amplifier and switching applications.

Features:
- DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A
- Collector-Emitter Sustaining Voltage: VCEO(sus) = 70V Min
- High Current-Gain Bandwidth Product:
fT = 4MHz Min @ IC = 500mA (NTE196)
= 10MHz Min @ IC = 500mA (NTE197)

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO...................................................... 70V
Collector-Base Voltage, VCB.........................................................80V
Emitter-Base Voltage, VEB...........................................................5V
Collector Current, IC
Continuous...................................................................7A
Peak.......................................................................10A
Base Current, IB.................................................................... 3A
Total Power Dissipation (TC = +25°C), PD............................................ 40W
Derate Above 25°C...................................................... 0.32W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +150°C
Storage Temperature Range, Tstg.......................................... -65° to +150°C
Thermal Resistance, Junction-to-Case, RthJC...................................3.125°C/W


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