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NTE189 PNP Si-Transistor 2A 80V TO-202N

Bestell-Nr.:    NTE189


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NTE189 NTE-189 | ECG189 ECG-189 | NTE Electronics NTE189 (PNP)
Silicon Complementary Transistors High Voltage Amplifier & Driver

>>> NTE188 (NPN) This product is discontinued. (nicht mehr lieferbar)

Description:
The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.

Features:
- High Collector−Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA
- High Power Dissipation: PD = 10W @ TC = +25°C

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO...................................................... 80V
Collector−Base Voiltage, VCB........................................................ 80V
Emitter−Base Voltage, VEB...........................................................4V
Continuous Collector Current, IC...................................................... 2A
Total Power Dissipation (TA = +25°C), PD.............................................. 1W
Derate Above 25°C.......................................................8mW/°C
Total Power Dissipation (TC = +25°C), PD............................................ 10W
Derate Above 25°C...................................................... 80mW/°C
Operating Junction Temperature Range, TJ.................................. −55° to +150°C
Storage Temperature Range, Tstg.......................................... −55° to +150°C
Thermal Resistance, Junction−to−Ambient (Note 2), RthJA.......................... 125°C/W
Thermal Resistance, Junction−to−Case, RthJC.................................... 12.5°C/W

Note 1. NTE188 is a discontinued device and is no longer available.
Note 2. RthJA is measured with the device soldered into a typical printed circuit board.


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