NTE182 NTE-182 | ECG182 ECG-182 | NTE Electronics
NTE182 (NPN)
Silicon Complementary Transistors
General Purpose Amplifier, Switch
See also >>> NTE183 (PNP)
Description:
The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use
in general purpose amplifier and switching applications.
Features:
- DC Current Gain Specified to 10A
- High Current Gain−Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA
Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO...................................................... 60V
Collector−Base Voltage, VCB........................................................ 70V
Emitter−Base Voltage, VEB...........................................................5V
Collector Current, IC................................................................ 10A
Base Current, IB.................................................................... 6A
Total Device Dissipation (TC = +25°C), PD............................................ 90W
Derate Above 25°C...................................................... 0.72W/°C
Operating Junction Temperature Range, TJ.................................. −55° to +150°C
Storage Temperature Range, Tstg.......................................... −55° to +150°C
Thermal Resistance, Junction−to−Case, RthJC.................................... 1.39°C/W
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