NTE181 NTE-181 | ECG181 ECG-181 | NTE Electronics
NTE181 (NPN)
Silicon Power Transistor
High Power Audio Amplifier
See also >>> NTE180 (PNP)
See also >>> NTE181MP = Matched pair of NTE181 (NPN)
Description:
The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case
designed for use as output devices in complementary audio amplifiers to 100 watts music power per
channel.
Features:
- High DC Current Gain: hFE = 25 - 100 @ IC = 7.5A
- Excellent Safe Operating Area
Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams
Absolute Maximum Ratings:
Collector-Emitter Voltage, VCER.....................................................100V
Collector-Base Voltage, VCB........................................................ 100V
Collector-Emitter Voltage, VCEO...................................................... 90V
Emitter-Base Voltage, VEB...........................................................4V
Collector Current, IC................................................................ 30A
Base Current, IB.................................................................. 7.5A
Total Device Dissipation (TC = +25°C), PD...........................................200W
Derate Above 25°C...................................................... 1.14W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC...................................0.875°C/W
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