NTE175 (NPN)
Silicon Complementary Transistors High Voltage, Medium Power Switch

See also >>> NTE38 (PNP)

Description:
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high-speed switching and linear amplifier applications for high-voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.

Features:
- Collector-Emitter Sustaining Voltage:
NTE38: VCEO(sus) = 350V @ IC = 200mA
NTE175: VCEO(sus) = 300V @ IC = 200mA
- Second Breakdown Collector Current:
NTE38 IS/b = 875mA @ VCE = 40V
NTE175 IS/b = 350mA @ VCE = 100V
- Usable DC Current Gain to 2.0Adc

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO
NTE38.....................................................................350V
NTE175.................................................................... 300V
Collector-Base Voltage, VCB
NTE38.....................................................................400V
NTE175.................................................................... 500V
Emitter-Base Voltage, VEB.........................................................6Vdc
Collector Current, IC
Continuous...................................................................2A
Peak (Note 1).................................................................5A
Base Current, IB.................................................................... 1A
Total Power Dissipation (TC = +25°C), PD............................................ 35W
Derate above 25°C.......................................................0.2W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +200°C
Storage Junction Temperature Range, Tstg.................................. -65° to +200°C
Thermal Resistance, Junction to Case, RΘJC.........................................5°C/W

Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle ≤ 10%.


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