NTE171 Si NPN Transistor 100mA 300V TO-202

Formerly: ECG171

NTE171
Silicon NPN Transistor Audio/Video Amplifier

Description:
The NTE171 is a silicon NPN transistor in a TO202 type case designed for high-voltage TV video and chroma output circuits, high-voltage linear amplifiers, and high-voltage transistor regulators.

Features:
- High Collector-Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @ IC = 1mA
- Low Collector-Base Capacitance: Ccb = 3pF Max @ VCB = 20V

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage (IC = 1mA, RBE = 10kΩ, Note 1), VCER........................ 300V
Collector-Base Voltage, VCBO...................................................... 300V
Emitter-Base Voltage, VEBO.......................................................... 5V
Collector Current, IC
Continuous...............................................................100mA
Peak.................................................................... 700mA
Base Current, IB................................................................ 250mA
Total Power Dissipation (TA = +25°C), PD............................................ 1.67W
Derate Above 25°C.................................................... 13.3mW/°C
Total Power Dissipation (TC = +25°C), PD...........................................6.25W
Derate Above 25°C...................................................... 50mW/°C
Operating Junction Temperature Range, TJ.................................. -55° to +150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C
Thermal Resistance, Junction to Ambient, RΘJA.................................... 75°C/W
Thermal Resistance, Junction to Case, RΘJC.......................................20°C/W
Lead Temperature (During Soldering, 1/16” from case, 10sec), TL.....................+260°C

Note 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.


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