NTE128P NTE-128P | ECG128P ECG-128P | NTE Electronics
NTE128P (NPN)
Silicon Complementary Transistors
General Purpose Amp
Description:
The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use
in general purpose power amplifier and switching applications.
Features:
- High VCE Ratings
- Exceptional Power Dissipation Capability
Info as pdf-file
NTE/ECG replacement list as pdf-file
NTE-ECG diagrams
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO...................................................... 100V
Collector-Emitter Voltage, VCEO...................................................... 80V
Emitter-Base Voltage, VEBO.......................................................... 5V
Continuous Collector Current , IC...................................................... 1A
Power Dissipation, PTOT
TA = +25°C.............................................................. 0.850W
TC = +25°C.................................................................. 2W
Operating Junction Temperature Range, TJ.................................. -55° to +150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C
Thermal Resistance, Junction-to-Ambient, RthJA.................................. 147°C/W
Thermal Resistance, Junction-to-Case, RthJC.................................... 62.5°C/W
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