NTE123A (NPN)
Silicon Complementary Transistors General Purpose

See also >>> NTE159M (PNP)

Description:
The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium-speed switching and amplifiers from audio to VHF frequencies.

Features:
- Low Collector Saturation Voltage: 1V (Max)
- High Current Gain-Bandwidth Product: fT = 300MHz (Min) @ IC 20mA

Info as pdf-file
NTE/ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO
NTE123A...................................................................40V
NTE159M...................................................................60V
Collector-Base Voltage, VCBO
NTE123A...................................................................75V
NTE159M...................................................................60V
Emitter-Base Voltage, VEBO
NTE123A.................................................................... 6V
NTE159M.................................................................... 5V
Continuous Collector Current, IC
NTE123A................................................................ 800mA
NTE159M................................................................ 600mA
Total Device Dissipation (TA = +25°C), PD............................................ 0.4W
Derate Above +25°C...................................................2.28mW/°C
Total Device Dissipation (TC = +25°C), PD
NTE123A.................................................................. 1.2W
Derate Above +25°C................................................ 6.85mW/°C
NTE159M.................................................................. 1.8W
Derate Above +25°C................................................ 10.3mW/°C
Operating Temperature Range, TJ.......................................... -65° to +200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C


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