NTE103 (NPN)
Germanium Complementary Transistors Power Output, Driver

See also >>> NTE102 (PNP)

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Description:
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for mediumspeed saturated switching applications.

Features:
- Low Collector-Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA
- High Emitter-Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20μA

Absolute Maximum Ratings:
Collector-Base Voltage, VCBO.......................................................25V
Collector-Emitter Voltage, VCES...................................................... 24V
Emitter-Base Voltage, VEBO.........................................................12V
Continuous Collector Current, IC.................................................. 150mA
Emitter Current, IE...............................................................100mA
Total Device Dissipation (TA = +25°C), PD.........................................150mW
Derate Above +25°.......................................................2mW/°C
Total Device Dissipation (TC = +25°C), PD.........................................300mW
Derate Above +25°.......................................................4mW/°C
Operating Junction Temperature Range, TJ.................................. -65° to +100°C
Storage Junction Temperature Range, Tstg.................................. -65° to +100°C


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