NTE98 Silicon NPN Transistor HV Darlington Power Amplifier Switch TO-3

Silicon NPN Transistor Power Darlington w/Base-Emitter Speed-up Diode
TO-3
Info as pdf-file

Description:

The NTE98 is a silicon Darlington NPN transistor in a TO3 type package designed for high voltage, high-speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line-operated switch-mode applications.

Applications:

• Switching Regulators
• Inverters
• Solenoid and Relay Drivers

Absolute Maximum Ratings:

Collector-Emitter Voltage, VCEO(sus)	500V
Collector-Emitter Voltage, VCEX(sus)	500V
Collector-Emitter Voltage, VCEV	700V
Emitter-Base Voltage, VEB	8V
Collector Current, IC             Continuous             Peak (Note 1)	20A 30A
Base Current, IB             Continuous             Peak (Note 1)	2.5A 5.0A
Total Device Dissipation (TC = +25°C), PD	175W
Derate above 25°C	1W/°C
Total Device Dissipation (TC = +100°C), PD	100W
Operating Junction Temperature Range, TJ	-65° to +200°C
Storage Temperature Range, Tstg	-65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC	1°C/W
Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL	+275°C

Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle </= 10%.

Electrical Characteristics: (T_C = +25°C unless otherwise specified)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
OFF Characteristics (Note 2)
Collector-Emitter Sustaining Voltage	VCEO(sus)	IC = 100mA, IB = 0, Vclamp = 500V	500	-	-	V
	VCEX(sus)	IC = 2A, Vclamp = 500V, VBE(off) = 5V, TC = +100°C	500	-	-	V
		IC = 5A, Vclamp = 500V, VBE(off) = 5V, TC = +100°C	375	-	-	V
Collector Cutoff Current	ICEV	VCEV = 700V, VBE(off) = 1.5V	-	-	0.25	mA
		VCEV = 700V, VBE(off) = 1.5V, TC = +150°C	-	-	5.0	mA
	ICER	VCE = 700V, RBE = 50 Ohm, TC = +100°C	-	-	5.0	mA
Emitter Cutoff Current	IEBO	VEB = 2V, IC = 0	-	-	175	mA
ON Characteristics (Note 2)
DC Current Gain	hFE	IC = 5A, VCE = 5V	40	-	400
		IC = 10A, VCE = 5V	30	-	300
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 10A, IB = 500mA	-	-	2.0	V
		IC = 10A, IB = 500mA, TC = +100°C	-	-	2.5	V
		IC = 20A, IB = 2A	-	-	3.5	V
Base-Emitter Saturation Voltage	VBE(sat)	IC = 10A, IB = 500mA	-	-	2.5	V
		IC = 10A, IB = 500mA, TC = +100°C	-	-	2.5	V
Diode Forward Voltage	Vf	IF = 5A, Note 3	-	3	5	V
Dynamic Characteristics
Small-Signal Current Gain	hFE	VCE = 10V, IC = 1A, f = 1MHz	8	-	-
Output Capacitance	Cob	VCB = 50V, IE = 0, f = 100kHz	100	-	325	pF
Switching Characteristics (Resistive Load)
Delay Time	td	VCC = 250V, IC = 10A, IB1 = 500mA, VBE(off) = 5V, tp = 50µs, Duty Cycle </= 2%	-	0.12	0.25	µs
Rise Time	tr		-	0.5	1.5	µs
Storage Time	ts		-	0.8	2.0	µs
Fall Time	tf		-	0.2	0.6	µs
Switching Characteristics (Inductive Load, Clamped)
Storage Time	tsv	IC = 10A(pk), Vclamp = 250V, IB1 = 500mA, VBE(off) = 5V, TC = +100°C	-	1.5	3.5	µs
Crossover Time	tc		-	0.36	1.6	µs
Storage Time	tsv	IC = 10A(pk), Vclamp = 250V, IB1 = 500mA, VBE(off) = 5V, TC = +25°C	-	0.8	-	µs
Crossover Time	tc		-	0.18	-	µs

Note 2.	Pulse Test: Pulse Width = 300µs, Duty Cycle </= 2%.
Note 3.	The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.

Anmerkung zu den NTE/ECG Austauschhalbleiter:
NTE-Austauschhalbleiter (früher ECG Philips und Sylvania) sind sorgfältig ausgesuchte und erprobte Halbleiter, die einen sicheren Ersatz für Originaltypen verschiedenster Hersteller und Ursprünge für fast alle Applikationsbereiche im Wartungsdienst bieten.
Alle NTE-Austausch-Halbleiter sind einzeln in durchsichtigen Plastikbeuteln verpackt, auf welchen die wichtigsten Daten vermerkt sind.

Falls Sie einen Halbleiter suchen, können Sie entweder die NTE QuickCross Software bei uns als CD kaufen (Best.Nr. 08.NTE.CD) oder sie gratis vom Internet runterladen.