NTE22
Silicon NPN Transistor AF PO, General Purpose Amp, Driver

Features:
- High Breakdown Voltage: VCEO = 80V
- Large IC Capacity: IC = 1A DC
- Good hFE Linearity
- Low Collector Saturation Voltage

Applications:
- Medium Power Output Stages
- High-Voltage Drivers

NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Base Voltage, VCBO...................................................... 100V
Collector-Emitter Voltage, VCEO.....................................................80V
Emitter-Base Voltage, VEBO.........................................................5V
Collector Current, IC
Continuous.................................................................. 1A
Pulse (Note 1)................................................................ 2A
Collector Dissipation, PC........................................................ 900mW
Junction Temperature, Tj........................................................ +135°C
Storage Temperature Range, Tstg.......................................... -55° to +125°C

Note 1. PW = 20ms, Duty Cycle = 1/2


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

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