NTE11 NTE-11 | ECG11 ECG-11 | NTE Electronics
NTE11 (NPN)
Silicon Complementary Transistors
High Current Amplifier
Info as pdf-file
NTE/ECG replacement list as pdf-file
NTE-ECG diagrams
See also >>> NTE12 (PNP)
Description:
The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case designed
for use in low-frequency output amplifier, DC converter, and strobe applications.
Features:
- High Collector Current: IC = 5A Max
- Low Collector-Emitter Saturation Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO
NTE11...................................................................... 40V
NTE12...................................................................... 27V
Collector-Emitter Voltage, VCEO
NTE11...................................................................... 20V
NTE12...................................................................... 18V
Emitter-Base Voltage, VEBO.......................................................... 7V
Collector Current, IC
Continuous...................................................................5A
Peak........................................................................ 8A
Total Power Dissipation, PD...................................................... 750mW
Operating Junction Temperature Range, TJ.........................................+150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C
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