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NTE71 Si NPN Transistor 20A 150V Fast Switch TO-63

Bestell-Nr.:    NTE71


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NTE71 Si NPN Transistor 20A 150V Fast Switch TO-63

Info as pdf-file

Description:
The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.

Absolute Maximum Ratings:
Collector-Base Voltage, VCBO...................................................... 150V
Collector-Emitter Voltage, VCEO.....................................................150V
Emitter-Base VOltage, VEBO........................................................ 10V
Continuous Collector Current, IC.....................................................20A
Continuous Base Current, IB........................................................ 4.5A
Total Power Dissipation (TC = +25°C), PD...........................................200W
Storage Temperature Range, Tstg.......................................... -65° to +200°C


Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage V(BR)CEO(sus) IC = 100mA 150 - - V
Collector Cutoff Current ICEX VCE = 150V, VBE = -1.5V - - 2 mA
VCE = 150V, VBE = -1.5V, TC = +150°C - - 20 mA
Emitter Cutoff Current IEBO VEB = 10V - - 250 µA
ON Characteristics (Note 1)
DC Current Gain hFE IC = 10A, VCE = 3V 10 - 50  
Collector-Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 1.5A - - 1.5 V
Base-Emitter Voltage VBE IC = 10A, IB = 1.5A - - 2.5 V
Dymanic Characteristics
Small-Signal Current Gain hfe VCE = 3V, IC = 10A, f = 1MHz 0.6 - -  
Turn-On Time ton VCC = 30V, IC = 10A, IB1 = 1.5A, IB2 = 1.5A - - 3.5 µs
Turn-Off Time toff - - 12.0 µs
Rise Time tr - - 3.5 µs
Storage Time ts - - 6.0 µs
Fall Time tf - - 6.0 µs

Note 1.Pulse test:  Pulse Width = 300µs, Duty Cycle </= 2%.



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