NTE68 (PNP)
Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications

See also >>> NTE388 (NPN)

Description:
The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.

Features:
- High Safe Operating Area: 2A @ 80V
- High DC Current Gain: hFE = 15 Min @ IC = 8A

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Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO.....................................................250V
Collector-Emitter Voltage, VCEX.....................................................400V
Collector-Base Voltage, VCBO...................................................... 400V
Emitter-Base Voltage, VEBO.......................................................... 5V
Collector Current, IC
Continuous.................................................................. 16A
Peak (Note 2)................................................................ 30A
Continuous Base Current, IB.......................................................... 5A
Total Power Dissipation (TC = +25°C), PD...........................................250W
Derate Above 25°C...................................................... 1.43W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC.................................... 0.70°C/W

Note 1. Matched complementary pairs are available upon request (NTE68MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other.
Note 2. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.


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