NTE64 NTE-64 | ECG64 ECG-64 | NTE Electronics
NTE64
Silicon NPN Transistor
UHF High Speed Switch
Description:
The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high-gain, low
noise small-signal amplifiers and applications requiring fast switching times.
Features:
- High Current Gain-Bandwidth Product: fT = 4.5GHz Typ @ IC = 15mA
- Low Noise Figure: NF = 2dB Typ @ f = 1GHz
- High Power Gain: Gpe = 10dB Min @ f = 1GHz
- Third Order Intercept: +23dBm Typ
Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components
Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.375W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +150°C
Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C/W
NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)
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Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.