NTE53
Silicon NPN Transistor High Voltage, High Speed Switch TO-3

Description:
The NTE53 is a silicon NPN transistor in a TO3 type package designed for high voltage, high-speed power switching in inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V line-operated switch-mode appliations.

Applications:
- Switching Regulators
- PWM Inverters and Motor Controls
- Deflection Circuits
- Solenoid and Relay Drivers

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Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings:
Collector -Emitter Voltage, VCEO(sus).................................................400V
Collector -Emitter Voltage, VCEX(sus).................................................450V
Collector -Emitter Voltage, VCEV.....................................................850V
Emitter-Base Voltage, VEB...........................................................9V
Collector Current, IC
Continuous.................................................................. 15A
Peak (Note 1)................................................................ 30A
Base Current, IB
Continuous.................................................................. 10A
Peak (Note 1)................................................................ 20A
Total Device Dissipation (TC = +25°C), PD...........................................175W
Derate Above 25°C.......................................................1.0W/°C
Total Device Dissipation (TC = +100°C), PD.......................................... 100W
Operating Junction Temperatur Range, TJ...................................-65° to +200°C
Storage Temperatur Range, Tstg............................................ -65° to +200°C
Thermal Resistance, Junction- to-Case, RthJC.....................................1.0°C/W
Maximum Lead temperature (During Soldering, 1/8” from case, 5sec), TL...............+275°C

Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle ≤ 10%.


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